@Article{SilvaUedaMell:2020:MeCySi,
               author = "Silva, Carla da and Ueda, M{\'a}rio and Mello, Carina Barros",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Metal Cylindrical Sieve (MCS) for plasma confinement and low 
                         sputteringnitrogen plasma immersion ion implantation",
              journal = "Applied Surface Science",
                 year = "2020",
               volume = "509",
                pages = "e145232",
                month = "Apr.",
             keywords = "Ion implantation, Surface modification, Hollow cathode discharge, 
                         Deposition in metallic tubes, SS308L MCS tubes.",
             abstract = "Nitrogen Plasma Immersion Ion Implantation (N-PIII) was performed 
                         in the Metal Cylindrical Sieve (MCS) configuration that consists 
                         of Stainless Steel 308 L (SS308L) spiral spring wound wire. Two 
                         N-PIII regimes were obtained: one using a current of 5 A (with 
                         ends open), in which an intense sputtering of the wire occurs 
                         while for currents above 12 A (with one side closed), the 
                         sputtering is diminished substantially. This behavior at different 
                         powers in MCS can be explained in terms of the sheath overlapping 
                         between the spiral spring paths. The plasma density near the wire 
                         is insufficient to overcome the sheath overlapping between the 
                         spiral spring paths when the current is low, which leads to high 
                         sputtering of the wire surface. However, in high current, sheath 
                         overlapping is avoided and high ion implantation condition is 
                         achieved. FEG-SEM analyses of the silicon sample placed on the 
                         screen plate in front of MCS mouth indicated a high deposition of 
                         the sputtered material at low current in contrast with low 
                         deposition at high current. These deposition free results allow us 
                         to plan efficient N-PIII treatments of different types and sizes 
                         of metal springs, grids, rings, and wires, with high performance, 
                         for industrial and scientific applications.",
                  doi = "10.1016/j.apsusc.2019.145232",
                  url = "http://dx.doi.org/10.1016/j.apsusc.2019.145232",
                 issn = "0169-4332",
             language = "en",
           targetfile = "silva_metal.pdf",
        urlaccessdate = "27 abr. 2024"
}